DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Kim, Daewon | ko |
dc.contributor.author | Seo, Myungsoo | ko |
dc.contributor.author | Jin, Ik Kyeong | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Lee, Hye Moon | ko |
dc.contributor.author | Jung, Soo-Ho | ko |
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Son, Gyeongho | ko |
dc.contributor.author | Yu, Kyoungsik | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2019-08-29T01:20:48Z | - |
dc.date.available | 2019-08-29T01:20:48Z | - |
dc.date.created | 2019-08-26 | - |
dc.date.created | 2019-08-26 | - |
dc.date.created | 2019-08-26 | - |
dc.date.created | 2019-08-26 | - |
dc.date.issued | 2019-08 | - |
dc.identifier.citation | ADVANCED MATERIALS TECHNOLOGIES, v.4, no.8 | - |
dc.identifier.issn | 2365-709X | - |
dc.identifier.uri | http://hdl.handle.net/10203/266062 | - |
dc.description.abstract | Fabric-based electronic textiles (e-textiles) have been investigated for the fabrication of high-performance wearable electronic devices with good durability. Current e-textile technology is limited by not only the delicate characteristics of the materials used but also by the fabric substrates, which impose constraints on the fabrication process. A polydopamine (PDA)-intercalated fabric memory (PiFAM) with a resistive random access memory (RRAM) architecture is reported for fabric-based wearable devices, as a step towards promising neuromorphic devices beyond the most simple. It is composed of interwoven cotton yarns. A solution-based dip-coating method is used to create a functional core-shell yarn. The outer shell is coated with PDA and the inner shell is coated with aluminum (Al) surrounding the core yarn, which serves as a backbone. The Al shell serves as the RRAM electrode and the PDA is a resistive-switching layer. These functional yarns are then interwoven to create the RRAM in a lattice point. Untreated yarn is intercalated between adjacent functional yarns to avoid cell-to-cell interference. The PiFAM is applied to implement a synapse, and the feasibility of a neuromorphic device with pattern recognition accuracy of approximate to 81% and the potential for application in wearable and flexible electronic platforms is demonstrated. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000479301700012 | - |
dc.identifier.scopusid | 2-s2.0-85066053133 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | ADVANCED MATERIALS TECHNOLOGIES | - |
dc.identifier.doi | 10.1002/admt.201900151 | - |
dc.contributor.localauthor | Yu, Kyoungsik | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Daewon | - |
dc.contributor.nonIdAuthor | Jin, Ik Kyeong | - |
dc.contributor.nonIdAuthor | Lee, Hye Moon | - |
dc.contributor.nonIdAuthor | Jung, Soo-Ho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | artificial synapses | - |
dc.subject.keywordAuthor | cotton fabric | - |
dc.subject.keywordAuthor | neuromorphic devices | - |
dc.subject.keywordAuthor | polydopamine | - |
dc.subject.keywordAuthor | resistive random access memory (RRAM) | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | DOPAMINE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TEXTILES | - |
dc.subject.keywordPlus | LOGIC | - |
dc.subject.keywordPlus | FILM | - |
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