Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

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dc.contributor.authorBae, Hagyoulko
dc.contributor.authorKim, Daewonko
dc.contributor.authorSeo, Myungsooko
dc.contributor.authorJin, Ik Kyeongko
dc.contributor.authorJeon, Seung-Baeko
dc.contributor.authorLee, Hye Moonko
dc.contributor.authorJung, Soo-Hoko
dc.contributor.authorJang, Byung Chulko
dc.contributor.authorSon, Gyeonghoko
dc.contributor.authorYu, Kyoungsikko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2019-08-29T01:20:48Z-
dc.date.available2019-08-29T01:20:48Z-
dc.date.created2019-08-26-
dc.date.created2019-08-26-
dc.date.created2019-08-26-
dc.date.created2019-08-26-
dc.date.issued2019-08-
dc.identifier.citationADVANCED MATERIALS TECHNOLOGIES, v.4, no.8-
dc.identifier.issn2365-709X-
dc.identifier.urihttp://hdl.handle.net/10203/266062-
dc.description.abstractFabric-based electronic textiles (e-textiles) have been investigated for the fabrication of high-performance wearable electronic devices with good durability. Current e-textile technology is limited by not only the delicate characteristics of the materials used but also by the fabric substrates, which impose constraints on the fabrication process. A polydopamine (PDA)-intercalated fabric memory (PiFAM) with a resistive random access memory (RRAM) architecture is reported for fabric-based wearable devices, as a step towards promising neuromorphic devices beyond the most simple. It is composed of interwoven cotton yarns. A solution-based dip-coating method is used to create a functional core-shell yarn. The outer shell is coated with PDA and the inner shell is coated with aluminum (Al) surrounding the core yarn, which serves as a backbone. The Al shell serves as the RRAM electrode and the PDA is a resistive-switching layer. These functional yarns are then interwoven to create the RRAM in a lattice point. Untreated yarn is intercalated between adjacent functional yarns to avoid cell-to-cell interference. The PiFAM is applied to implement a synapse, and the feasibility of a neuromorphic device with pattern recognition accuracy of approximate to 81% and the potential for application in wearable and flexible electronic platforms is demonstrated.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleBioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications-
dc.typeArticle-
dc.identifier.wosid000479301700012-
dc.identifier.scopusid2-s2.0-85066053133-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue8-
dc.citation.publicationnameADVANCED MATERIALS TECHNOLOGIES-
dc.identifier.doi10.1002/admt.201900151-
dc.contributor.localauthorYu, Kyoungsik-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKim, Daewon-
dc.contributor.nonIdAuthorJin, Ik Kyeong-
dc.contributor.nonIdAuthorLee, Hye Moon-
dc.contributor.nonIdAuthorJung, Soo-Ho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorartificial synapses-
dc.subject.keywordAuthorcotton fabric-
dc.subject.keywordAuthorneuromorphic devices-
dc.subject.keywordAuthorpolydopamine-
dc.subject.keywordAuthorresistive random access memory (RRAM)-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusDOPAMINE-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusTEXTILES-
dc.subject.keywordPlusLOGIC-
dc.subject.keywordPlusFILM-
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