(A) non-invasive defect detection and localization method, and a self-repair redundancy configuration for improved reliability of through silicon via (TSV) based 2.5D/3D IC

Abstract

Through silicon via (TSV) based 2.5D/3D IC technology allows low data rate, low power consumption, high data bandwidth, and small form factor system. For higher data bandwidth transfer in next generation 2.5D/3D ICs, the number of TSVs is forecasted to increase with reduced diameter and pitch. Due to the downsizing of TSVs, the fabrication becomes more challenging to maintain high yield. In addition, it is limited to access thousands of TSVs for testing and verifying the reliability. This thesis proposes a non-invasive defect detection and localization method and self-repair redundancy configuration for improved reliability of TSV based 2.5D/3D IC. The effect of open and short defects on TSV channel is analyzed for detection and localization, and the proposed method is experimentally verified with up to 8-stack TSV daisy-chain test vehicles. Furthermore, a self-repair TSV redundancy configuration is proposed

TSV test circuit and redundancy configuration are designed and verified with the simulation results. The proposed self-repair redundancy configuration successfully improves the yield, time delay, and power consumption compared to conventional designs.