Development of encapsulation layer of OLED and gate insulator of oxide TFTs for flexible AMOLED

Abstract

Active matrix organic light-emitting diodes (AMOLEDs) have attracted huge attention because it is one of the most promising candidates for flexible display. However, in order to realize flexible devices using AMOLED, it is essential to develop substrate flexibility, high-performance thin film encapsulation (TFE), and the high-performance backplane. For this reason, I developed high-performance TFE which can achieve the long-term stability of OLEDs through the double-layer structure of silicon oxynitride (SiON) deposited by plasma-enhanced chemical vapor deposition (PE-CVD) and acrylate polymer coated by spin-coating. In addition, to realize high-performance backplane that can be adapted to high-resolution and large area displays, alumina ($Al_2O_3$) deposited using atomic layer deposition (ALD) has been applied as a gate insulator layer of the oxide semiconductor thin film transistor (oxide TFT). As a result, we developed backplane with high mobility and high reliability.