Highly Efficient Phosphor-Free Warm White Light Emitting Diodes based on InGaN/GaN Ring Structures Fabricated by Selective Area Growth and Wet Etching
- Publisher
- The Korean Physical Society
- Issue Date
- 2018-07-02
- Language
- English
- Citation
The 19th International Symposium on the Physics of Semiconductors and Applications
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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