Fabrication of Self-aligned twofold epitaxial lateral overgrowth for highly efficient three-dimensional GaN based light emitting diodes

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dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorSong, Hyun Gyuko
dc.date.accessioned2019-07-18T05:54:51Z-
dc.date.available2019-07-18T05:54:51Z-
dc.date.created2019-06-23-
dc.date.issued2018-11-15-
dc.identifier.citationInternational Workshop on Nitride Semiconductors (IWN 2018)-
dc.identifier.urihttp://hdl.handle.net/10203/263533-
dc.languageEnglish-
dc.publisherMaterials Research Society-
dc.titleFabrication of Self-aligned twofold epitaxial lateral overgrowth for highly efficient three-dimensional GaN based light emitting diodes-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameInternational Workshop on Nitride Semiconductors (IWN 2018)-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationKanazawa-
dc.contributor.localauthorCho, Yong-Hoon-
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PH-Conference Papers(학술회의논문)
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