DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Dae-Woong | ko |
dc.contributor.author | Utomo, Dzuhri Radityo | ko |
dc.contributor.author | Lam, Bao Huu | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.contributor.author | Hong, Jong-Phil | ko |
dc.date.accessioned | 2019-06-19T01:10:07Z | - |
dc.date.available | 2019-06-19T01:10:07Z | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.54, no.6, pp.1613 - 1623 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262728 | - |
dc.description.abstract | This paper proposes a wideband and high-gain amplifier design technique based on a dual-peak maximum achievable gain (G(max)) core. The proposed technique achieves a power gain close to G(max) at two frequencies simultaneously, thereby enabling the implementation of a wideband and high-gain amplifier. The input, output, and interstage matching networks are designed in a gain compensating manner, considering the gain variation of the dual-peak G(max)-core. The four-stage amplifier based on an identical dual-peak G(max)-core at each stage is implemented in a 65-nm CMOS process. The measured results show a 3-dB bandwidth of 30 GHz (227.5-257.2 GHz), a gain of 12.4 +/- 1.5 dB, and a peak power added efficiency (PAE) of 1.6% with dc power dissipation of 23.8 mW, which corresponds to the widest 3-dB bandwidth and gain per stage comparable to those of other reported CMOS amplifiers operating at frequencies above 200 GHz. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak G(max)-Core | - |
dc.type | Article | - |
dc.identifier.wosid | 000469840600010 | - |
dc.identifier.scopusid | 2-s2.0-85066458326 | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1613 | - |
dc.citation.endingpage | 1623 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/JSSC.2019.2899515 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Utomo, Dzuhri Radityo | - |
dc.contributor.nonIdAuthor | Lam, Bao Huu | - |
dc.contributor.nonIdAuthor | Hong, Jong-Phil | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Amplifier | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | dual-peak | - |
dc.subject.keywordAuthor | gain boosting | - |
dc.subject.keywordAuthor | maximum achievable gain (G(max)) | - |
dc.subject.keywordAuthor | terahertz (THz) | - |
dc.subject.keywordAuthor | wideband | - |
dc.subject.keywordPlus | POWER-GAIN | - |
dc.subject.keywordPlus | TERAHERTZ SPECTROSCOPY | - |
dc.subject.keywordPlus | GHZ AMPLIFIER | - |
dc.subject.keywordPlus | TRANSMISSION | - |
dc.subject.keywordPlus | DESIGN | - |
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