Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection

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dc.contributor.authorGeum, Dae-myeongko
dc.contributor.authorKim, Sanghyeonko
dc.contributor.authorKim, Seongkwangko
dc.contributor.authorKyhm, JHko
dc.contributor.authorSong, JDko
dc.contributor.authorChoi, Won Jinko
dc.date.accessioned2019-06-17T08:50:04Z-
dc.date.available2019-06-17T08:50:04Z-
dc.date.created2019-06-17-
dc.date.created2019-06-17-
dc.date.issued2019-06-
dc.identifier.citation39th Symposium on VLSI Technology, VLSI Technology 2019-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10203/262651-
dc.description.abstractMulticolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.-
dc.languageEnglish-
dc.publisherThe IEEE Electron Devices Society,The Japan Society of Applied Physics-
dc.titleMonolithic integration of GaAs//InGaAs photodetectors for multicolor detection-
dc.typeConference-
dc.identifier.wosid000555822600045-
dc.identifier.scopusid2-s2.0-85070341428-
dc.type.rimsCONF-
dc.citation.publicationname39th Symposium on VLSI Technology, VLSI Technology 2019-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationRIHGA Royal Hotel Kyoto-
dc.identifier.doi10.23919/VLSIT.2019.8776526-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorKyhm, JH-
dc.contributor.nonIdAuthorSong, JD-
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EE-Conference Papers(학술회의논문)
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