DC Field | Value | Language |
---|---|---|
dc.contributor.author | Geum, Dae-myeong | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.contributor.author | Kim, Seongkwang | ko |
dc.contributor.author | Kyhm, JH | ko |
dc.contributor.author | Song, JD | ko |
dc.contributor.author | Choi, Won Jin | ko |
dc.date.accessioned | 2019-06-17T08:50:04Z | - |
dc.date.available | 2019-06-17T08:50:04Z | - |
dc.date.created | 2019-06-17 | - |
dc.date.created | 2019-06-17 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | 39th Symposium on VLSI Technology, VLSI Technology 2019 | - |
dc.identifier.issn | 0743-1562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262651 | - |
dc.description.abstract | Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR. | - |
dc.language | English | - |
dc.publisher | The IEEE Electron Devices Society,The Japan Society of Applied Physics | - |
dc.title | Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection | - |
dc.type | Conference | - |
dc.identifier.wosid | 000555822600045 | - |
dc.identifier.scopusid | 2-s2.0-85070341428 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 39th Symposium on VLSI Technology, VLSI Technology 2019 | - |
dc.identifier.conferencecountry | JA | - |
dc.identifier.conferencelocation | RIHGA Royal Hotel Kyoto | - |
dc.identifier.doi | 10.23919/VLSIT.2019.8776526 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Kyhm, JH | - |
dc.contributor.nonIdAuthor | Song, JD | - |
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