Anomalous behavior of the quasi-one-dimensional quantum material Na2OsO4 at high pressure

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Na(2)OsO(4 )is an unusual quantum material that, in contrast to the common 5d(2) oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level, attributed to a distortion in the OsO6 octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclining through the semiconductor-to-metal transition observed at 23 GPa. Even more peculiarly, we discover that before this transition, the material becomes more insulating instead of merely turning into a metal according to the conventional wisdom. To investigate the underlying mechanisms, we applied experimental and theoretical methods to examine the electronic and crystal structures comprehensively and conclude that the enhanced insulating state at high pressure originates from the enlarged distortion of the OsO6. It is such a distortion that widens the band gap and decreases the electron occupancy in Os's t(2g) orbital through an interplay of the lattice, charge, and orbital in the material, which is responsible for the changes observed in our experiments. (C) 2018 Elsevier Ltd. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2019-03
Language
English
Article Type
Article
Citation

Materials Today Physics, v.8, pp.18 - 24

ISSN
2542-5293
DOI
10.1016/j.mtphys.2018.12.001
URI
http://hdl.handle.net/10203/262202
Appears in Collection
PH-Journal Papers(저널논문)
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