Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

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dc.contributor.authorLee, Tae Inko
dc.contributor.authorAhn, Hyunjunko
dc.contributor.author김민주ko
dc.contributor.authorShin, Eui Joongko
dc.contributor.authorLee, Seung Hwanko
dc.contributor.authorShin, Sung Wonko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorYu, Hyun-Youngko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2019-05-02T02:50:31Z-
dc.date.available2019-05-02T02:50:31Z-
dc.date.created2019-04-29-
dc.date.created2019-04-29-
dc.date.created2019-04-29-
dc.date.issued2019-04-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/261710-
dc.description.abstractAn advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 2 similar to 4% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (Dit) of 1.2 x 10(12) eV(-1) cm(-2), a record-low gate leakage current of 1.14 x 10(-7) A/cm(2) at -1 V, and peakmobility of 68 cm(2)/V.s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleUltrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current-
dc.typeArticle-
dc.identifier.wosid000464306900004-
dc.identifier.scopusid2-s2.0-85064071005-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.issue4-
dc.citation.beginningpage502-
dc.citation.endingpage505-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2019.2899139-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorShin, Sung Won-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.contributor.nonIdAuthorYu, Hyun-Young-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGermanium-
dc.subject.keywordAuthorEOT-
dc.subject.keywordAuthorgate leakage current-
dc.subject.keywordAuthorinterface properties-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordPlusEXTRACTION-
dc.subject.keywordPlusGERMANIUM-
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