DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae In | ko |
dc.contributor.author | Ahn, Hyunjun | ko |
dc.contributor.author | 김민주 | ko |
dc.contributor.author | Shin, Eui Joong | ko |
dc.contributor.author | Lee, Seung Hwan | ko |
dc.contributor.author | Shin, Sung Won | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Yu, Hyun-Young | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2019-05-02T02:50:31Z | - |
dc.date.available | 2019-05-02T02:50:31Z | - |
dc.date.created | 2019-04-29 | - |
dc.date.created | 2019-04-29 | - |
dc.date.created | 2019-04-29 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/261710 | - |
dc.description.abstract | An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 2 similar to 4% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (Dit) of 1.2 x 10(12) eV(-1) cm(-2), a record-low gate leakage current of 1.14 x 10(-7) A/cm(2) at -1 V, and peakmobility of 68 cm(2)/V.s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current | - |
dc.type | Article | - |
dc.identifier.wosid | 000464306900004 | - |
dc.identifier.scopusid | 2-s2.0-85064071005 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 502 | - |
dc.citation.endingpage | 505 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2019.2899139 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Shin, Sung Won | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Germanium | - |
dc.subject.keywordAuthor | EOT | - |
dc.subject.keywordAuthor | gate leakage current | - |
dc.subject.keywordAuthor | interface properties | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | GERMANIUM | - |
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