High Speed Flash Memory by a Dopant-Segregated Schottky-Barrier MOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최양규 | ko |
| dc.contributor.author | 장문규 | ko |
| dc.contributor.author | 최성진 | ko |
| dc.date.accessioned | 2019-04-16T03:50:25Z | - |
| dc.date.available | 2019-04-16T03:50:25Z | - |
| dc.date.created | 2013-11-07 | - |
| dc.date.issued | 2009-10-21 | - |
| dc.identifier.citation | 한국물리학회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/260314 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | High Speed Flash Memory by a Dopant-Segregated Schottky-Barrier MOSFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 한국물리학회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 창원 | - |
| dc.contributor.localauthor | 최양규 | - |
| dc.contributor.nonIdAuthor | 장문규 | - |
| dc.contributor.nonIdAuthor | 최성진 | - |
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