DSpace at KOASAS: Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) Thin-Film Transistors Fabricated at 200℃

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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) Thin-Film Transistors Fabricated at 200℃

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Bae, Byeong-Soo researcher / Seo, Jin-Suk / Jeon, Jun-Hyuck / Hwang, Young Hwan / Ryu, Min Ki / Ryu, Sang-Hee Ko

Publisher: IMID

Issue Date: 2012-08

Language: English

Citation: 2012 International Meeting on Information Display

URI: http://hdl.handle.net/10203/259556

Appears in Collection: MS-Conference Papers(학술회의논문)

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Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) Thin-Film Transistors Fabricated at 200℃

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