Calibration method for rotating-analyser-type spectral imaging ellipsometers

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dc.contributor.authorChegal, Wko
dc.contributor.authorCho, YJko
dc.contributor.authorOh, SBko
dc.contributor.authorCho, HMko
dc.contributor.authorLee, YWko
dc.contributor.authorKim, Soohyunko
dc.date.accessioned2007-12-28T07:16:03Z-
dc.date.available2007-12-28T07:16:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-03-
dc.identifier.citationMEASUREMENT SCIENCE & TECHNOLOGY, v.16, pp.716 - 722-
dc.identifier.issn0957-0233-
dc.identifier.urihttp://hdl.handle.net/10203/2575-
dc.description.abstractData reduction and calibration procedures are introduced for a,novel rotating-analyser-type spectral imaging ellipsometer. Using a monaxial power spectrograph, we developed a unique spectral imaging ellipsometer. It combines one-dimensional imaging ellipsometry with spectroscopic ellipsometry, and enables real-time measurement of the optical parameters and dimensional structures of patterned or multilayered thin film. It also has more calibration factors than conventional ellipsometers. We therefore present a method using Jones matrices for describing the polarization sensitivity of the spectrograph and random noise of the CCD array. For a patterned SiO2 layer on a silicon wafer, we used the spectral imaging ellipsometer to obtain a one-dimensional thickness profile.-
dc.description.sponsorshipFor this research, the authors acknowledge the support of the NT-BTMeasurement and Manipulation Project and the Center for Nanoscale Mechatronics and Manufacturing.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIOP PUBLISHING LTD-
dc.subjectSILICON-
dc.subjectMICROELLIPSOMETRY-
dc.subjectSURFACES-
dc.subjectDESIGN-
dc.subjectSYSTEM-
dc.titleCalibration method for rotating-analyser-type spectral imaging ellipsometers-
dc.typeArticle-
dc.identifier.wosid000227766500015-
dc.identifier.scopusid2-s2.0-24144447672-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.beginningpage716-
dc.citation.endingpage722-
dc.citation.publicationnameMEASUREMENT SCIENCE & TECHNOLOGY-
dc.identifier.doi10.1088/0957-0233/16/3/014-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Soohyun-
dc.contributor.nonIdAuthorChegal, W-
dc.contributor.nonIdAuthorCho, YJ-
dc.contributor.nonIdAuthorOh, SB-
dc.contributor.nonIdAuthorCho, HM-
dc.contributor.nonIdAuthorLee, YW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorthickness profile-
dc.subject.keywordAuthorspectral imaging-
dc.subject.keywordAuthorimaging ellipsometry-
dc.subject.keywordAuthorcalibration method-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusMICROELLIPSOMETRY-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusSYSTEM-
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