SIO발생속도조절에의한탄화규소피복흑연의제조방법The manufacturing method of the silicon carbide coating graphite by the SiO generation rate control

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dc.contributor.author시스템생성자ko
dc.contributor.author이준근ko
dc.contributor.author김창삼ko
dc.contributor.author최헌진ko
dc.contributor.author박성훈ko
dc.date.accessioned2019-04-15T18:53:44Z-
dc.date.available2019-04-15T18:53:44Z-
dc.date.issued1991-04-11-
dc.identifier.urihttp://hdl.handle.net/10203/257418-
dc.description.abstract내용 없음.-
dc.titleSIO발생속도조절에의한탄화규소피복흑연의제조방법-
dc.title.alternativeThe manufacturing method of the silicon carbide coating graphite by the SiO generation rate control-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthor시스템생성자-
dc.contributor.nonIdAuthor이준근-
dc.contributor.nonIdAuthor김창삼-
dc.contributor.nonIdAuthor최헌진-
dc.contributor.nonIdAuthor박성훈-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber10-1988-0009033-
dc.identifier.patentRegistrationNumber10-0041122-0000-
dc.date.application1988-07-20-
dc.date.registration1991-04-11-
dc.publisher.countryKO-
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