Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이창휘 | ko |
| dc.contributor.author | 오영준 | ko |
| dc.contributor.author | 김근명 | ko |
| dc.contributor.author | 장기주 | ko |
| dc.date.accessioned | 2019-04-15T18:31:12Z | - |
| dc.date.available | 2019-04-15T18:31:12Z | - |
| dc.date.created | 2014-01-12 | - |
| dc.date.issued | 2013-10 | - |
| dc.identifier.citation | 한국물리학회 가을 학술논문발표회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/257191 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 한국물리학회 가을 학술논문발표회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.contributor.localauthor | 장기주 | - |
| dc.contributor.nonIdAuthor | 이창휘 | - |
| dc.contributor.nonIdAuthor | 오영준 | - |
| dc.contributor.nonIdAuthor | 김근명 | - |
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