DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, KS | ko |
dc.contributor.author | Park, NM | ko |
dc.contributor.author | Kim, TY | ko |
dc.contributor.author | Kim, KH | ko |
dc.contributor.author | Sung, GY | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2019-04-15T16:31:59Z | - |
dc.date.available | 2019-04-15T16:31:59Z | - |
dc.date.created | 2013-06-13 | - |
dc.date.issued | 2005-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.86, no.7 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/255886 | - |
dc.description.abstract | We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n-type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%. (C) 2005 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | ERBIUM-DOPED SILICON | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | FILMS | - |
dc.subject | LUMINESCENCE | - |
dc.subject | CONFINEMENT | - |
dc.subject | OXYGEN | - |
dc.subject | SIO2 | - |
dc.title | High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000227439400033 | - |
dc.identifier.scopusid | 2-s2.0-17044375507 | - |
dc.type.rims | ART | - |
dc.citation.volume | 86 | - |
dc.citation.issue | 7 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1866638 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Cho, KS | - |
dc.contributor.nonIdAuthor | Park, NM | - |
dc.contributor.nonIdAuthor | Kim, TY | - |
dc.contributor.nonIdAuthor | Kim, KH | - |
dc.contributor.nonIdAuthor | Sung, GY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | ERBIUM-DOPED SILICON | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | CONFINEMENT | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | SIO2 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.