High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer

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We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n-type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%. (C) 2005 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2005-02
Language
English
Article Type
Article
Keywords

PULSED-LASER DEPOSITION; ERBIUM-DOPED SILICON; QUANTUM DOTS; FILMS; LUMINESCENCE; CONFINEMENT; OXYGEN; SIO2

Citation

APPLIED PHYSICS LETTERS, v.86, no.7

ISSN
0003-6951
DOI
10.1063/1.1866638
URI
http://hdl.handle.net/10203/255886
Appears in Collection
NT-Journal Papers(저널논문)
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