DC Field | Value | Language |
---|---|---|
dc.contributor.author | National NanoFab Center | ko |
dc.contributor.author | Kim, Jeoungwoo | ko |
dc.contributor.author | Lee, Wangyu | ko |
dc.contributor.author | Jeon, Hoseung | ko |
dc.contributor.author | Hyung, Junghwan | ko |
dc.contributor.author | Park, Jaehong | ko |
dc.date.accessioned | 2019-04-15T15:58:35Z | - |
dc.date.available | 2019-04-15T15:58:35Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/255517 | - |
dc.description.abstract | The present invention provides a semiconductor device manufacturing method for lowering the technical difficulties of a process forming a horizontal single crystal nanowire and a manufacturing cost, the semiconductor device manufacturing method comprising the steps of: preparing a substrate including a first area and a second area; determining a position at which a nanowire is to be formed on the substrate of the first area and arranging an empty space in which the nanowire is to be filled; exposing a substrate surface of a part adjacent to the first area; causing selective single crystal growth from the exposed substrate surface; and forming a nanowire by a self-aligned method through an etching process within the first area, and removing, from outside the first area, a single crystal growth layer of the remaining areas excluding a part necessary for the wiring of the second area. | - |
dc.title | Semiconductor device manufacturing method | - |
dc.title.alternative | 반도체 장치의 제조방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.nonIdAuthor | Kim, Jeoungwoo | - |
dc.contributor.nonIdAuthor | Lee, Wangyu | - |
dc.contributor.nonIdAuthor | Jeon, Hoseung | - |
dc.contributor.nonIdAuthor | Hyung, Junghwan | - |
dc.contributor.nonIdAuthor | Park, Jaehong | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 15329894 | - |
dc.identifier.patentRegistrationNumber | 9899216 | - |
dc.date.application | 2014-10-28 | - |
dc.date.registration | 2018-02-20 | - |
dc.publisher.country | US | - |
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