크로스톡 방지 구조를 가지는 실리콘 광전자 증배센서Silicon photomultiplier having ree crosstalk structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 나노팹 | ko |
| dc.contributor.author | 조규성 | ko |
| dc.contributor.author | 임경택 | ko |
| dc.contributor.author | 김형택 | ko |
| dc.contributor.author | 조민식 | ko |
| dc.contributor.author | 설우석 | ko |
| dc.date.accessioned | 2019-04-15T14:59:07Z | - |
| dc.date.available | 2019-04-15T14:59:07Z | - |
| dc.date.issued | 2017-07-21 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/254665 | - |
| dc.title | 크로스톡 방지 구조를 가지는 실리콘 광전자 증배센서 | - |
| dc.title.alternative | Silicon photomultiplier having ree crosstalk structure | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 조규성 | - |
| dc.contributor.nonIdAuthor | 나노팹 | - |
| dc.contributor.nonIdAuthor | 김형택 | - |
| dc.contributor.nonIdAuthor | 조민식 | - |
| dc.contributor.nonIdAuthor | 설우석 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 10-2015-0184020 | - |
| dc.identifier.patentRegistrationNumber | 10-1762431-0000 | - |
| dc.date.application | 2015-12-22 | - |
| dc.date.registration | 2017-07-21 | - |
| dc.publisher.country | KO | - |
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