Characteristics of particulate generated by dry laser stripping of positive photoresist on glass wafer

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 201
  • Download : 117
The characteristics of particles during the stripping of photoresist by ns-pulsed UV laser were investigated. For optically transparent substrate like glass wafer, laser irradiation from backside of wafer was more effective for the photoresist stripping than that from front-side of wafer. The difference between irradiation directions was caused by the enhancement of mechanical effect in backward laser irradiation.
Publisher
한국입자에어로졸학회
Issue Date
2005-07
Keywords

pulsed laser; dry stripping; photoresist; nanoparticle

Citation

한국입자에어로졸학회 학술대회 논문집, pp.291-292

URI
http://hdl.handle.net/10203/25462
Appears in Collection
ME-Conference Papers(학술회의논문)
Files in This Item
Characteristics of particulate generated by dry laser stripping of positive photoresist on glass wafer.pdf(250.91 kB)Download

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0