Characteristics of particulate generated by dry laser stripping of positive photoresist on glass wafer

Abstract

The characteristics of particles during the stripping of photoresist by ns-pulsed UV laser were investigated. For optically transparent substrate like glass wafer, laser irradiation from backside of wafer was more effective for the photoresist stripping than that from front-side of wafer. The difference between irradiation directions was caused by the enhancement of mechanical effect in backward laser irradiation.