Method of forming fine patterns using block copolymer블록 공중합체를 이용한 미세 패턴의 형성 방법
Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:
- Assignee
- KAIST, SK INNOVATION CO LTD
- Country
- US (United States)
- Issue Date
- 2018-08-14
- Application Date
- 2017-09-22
- Application Number
- 15712698
- Registration Date
- 2018-08-14
- Registration Number
- 10,047,182
- Appears in Collection
- MS-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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