Simulation of Strain-Assisted Switching in Synthetic Antiferromagnetic Free Layer-Based Magnetic Tunnel Junction

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We perform macrospin simulations on a magnetic tunnel junction structure with perpendicular magnetic anisotropy, in which the conventional free layer is substituted with synthetic antiferromagnetic free layers to improve the thermal stability. In order to reduce the switching current Pb(Zr0.2Ti0.8)O-3 material with (001) surface orientation is adopted, which is adjacent to the second free layer so that it applies biaxial stress to the interface under external voltage. We solve the Landau-Lifshitz-Gilbert-Slonczewski equation incorporating thermal and strain fields to describe the transient dynamics of magnetizations in both the free layers. The simulation results show a substantial reduction in switching current and significantly enhanced switching probability by modulating current and strain pulses.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-04
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON MAGNETICS, v.55, no.4

ISSN
0018-9464
DOI
10.1109/TMAG.2019.2898947
URI
http://hdl.handle.net/10203/253939
Appears in Collection
EE-Journal Papers(저널논문)
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