Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: The effects of an interfacial layer and rapid thermal annealing

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 250
  • Download : 2
DC FieldValueLanguage
dc.contributor.authorChung, Su Ock-
dc.contributor.authorKim, Jae Whan-
dc.contributor.authorKim, Sung Tae-
dc.contributor.authorKim, Geun Hong-
dc.contributor.authorLee, Won Jong-
dc.date.accessioned2011-09-19T04:43:40Z-
dc.date.available2011-09-19T04:43:40Z-
dc.date.issued1997-04-
dc.identifier.citationMaterials Chemistry and Physics, Vol.53, pp.60-66en
dc.identifier.issn0254-0584-
dc.identifier.urihttp://hdl.handle.net/10203/25224-
dc.description.abstractPerovskite lead zirconate titanate (PZT) thin films were fabricated on Pt(70 nm)/Ti(100 nm) SiO2/Si substrates at 470oC and 500oC, respectively, by electron cyclotron resonance plasma-enhanced chemical vapor deposition using metal organic sources. A Pb-deficient interfacial layer was observed between the PZT film and Pt substrate by cross-sectional TEM, which seems to distort the C-V hysteresis loop of the Pt/PZT/Pt capacitor. PZT thin films deposited at 500oC had thinner interfacial layers and showed better electric properties than those deposited at 470oC. Effects of the interfacial layer and post-heat treatment on the microstructure and electric properties of PZT thin films were investigated.en
dc.description.sponsorshipThe authors acknowledge the support of Samsung Electronics Co. Ltd. for this work.en
dc.language.isoen_USen
dc.publisherElsevieren
dc.subjectPZTen
dc.subjectECR PECVDen
dc.subjectMetal organic sourceen
dc.subjectMicrostructureen
dc.subjectElectric propertiesen
dc.titleMicrostructure and electric properties of the PZT thin films fabricated by ECR PECVD: The effects of an interfacial layer and rapid thermal annealingen
dc.typeArticleen
Appears in Collection
MS-Journal Papers(저널논문)

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0