Structure and electrical properties of Pb(ZrxTi1-x)O-3 deposited on textured Pt thin films

Abstract

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O-3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 degreesC by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 degreesC by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors. (C) 2001 American Institute of Physics.