Reliability Improvement of Charge Trap Flash Memory Cell with Sealing Oxide in Fluorine Incorporation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승환 | ko |
| dc.contributor.author | 이태윤 | ko |
| dc.contributor.author | 안현준 | ko |
| dc.contributor.author | 이태인 | ko |
| dc.contributor.author | 신의중 | ko |
| dc.contributor.author | 신성원 | ko |
| dc.contributor.author | 조병진 | ko |
| dc.date.accessioned | 2019-03-19T01:58:33Z | - |
| dc.date.available | 2019-03-19T01:58:33Z | - |
| dc.date.created | 2019-03-12 | - |
| dc.date.created | 2019-03-12 | - |
| dc.date.issued | 2019-02-14 | - |
| dc.identifier.citation | 제26회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/251877 | - |
| dc.language | English | - |
| dc.publisher | DB하이텍, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | Reliability Improvement of Charge Trap Flash Memory Cell with Sealing Oxide in Fluorine Incorporation | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제26회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 웰리힐리파크 | - |
| dc.contributor.localauthor | 조병진 | - |
| dc.contributor.nonIdAuthor | 이태윤 | - |
| dc.contributor.nonIdAuthor | 신성원 | - |
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