DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, Jeongkyun | ko |
dc.contributor.author | Ryu, Jae Hyeon | ko |
dc.contributor.author | Baek, Geun Woo | ko |
dc.contributor.author | Jung, Heeyoung | ko |
dc.contributor.author | Seo, Seung Gi | ko |
dc.contributor.author | An, Kunsik | ko |
dc.contributor.author | Jeong, Byeong Guk | ko |
dc.contributor.author | Lee, Doh Chang | ko |
dc.contributor.author | Hong, Byung Hee | ko |
dc.contributor.author | Bae, Wan Ki | ko |
dc.contributor.author | Lee, Jong-Ho | ko |
dc.contributor.author | Lee, Changhee | ko |
dc.contributor.author | Jin, Sung Hun | ko |
dc.date.accessioned | 2019-03-19T01:51:18Z | - |
dc.date.available | 2019-03-19T01:51:18Z | - |
dc.date.created | 2019-03-11 | - |
dc.date.created | 2019-03-11 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | SMALL, v.15, no.7 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10203/251802 | - |
dc.description.abstract | In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of approximate to 45% of 1/2 V-DD. More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m(-2) at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates | - |
dc.type | Article | - |
dc.identifier.wosid | 000459722300001 | - |
dc.identifier.scopusid | 2-s2.0-85059962458 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 7 | - |
dc.citation.publicationname | SMALL | - |
dc.identifier.doi | 10.1002/smll.201803852 | - |
dc.contributor.localauthor | Lee, Doh Chang | - |
dc.contributor.nonIdAuthor | Roh, Jeongkyun | - |
dc.contributor.nonIdAuthor | Ryu, Jae Hyeon | - |
dc.contributor.nonIdAuthor | Baek, Geun Woo | - |
dc.contributor.nonIdAuthor | Jung, Heeyoung | - |
dc.contributor.nonIdAuthor | Seo, Seung Gi | - |
dc.contributor.nonIdAuthor | An, Kunsik | - |
dc.contributor.nonIdAuthor | Hong, Byung Hee | - |
dc.contributor.nonIdAuthor | Bae, Wan Ki | - |
dc.contributor.nonIdAuthor | Lee, Jong-Ho | - |
dc.contributor.nonIdAuthor | Lee, Changhee | - |
dc.contributor.nonIdAuthor | Jin, Sung Hun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | logic gate | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | quantum-dot light-emitting diode | - |
dc.subject.keywordAuthor | threshold voltage control | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DEVICES | - |
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