DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Myung-Su | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Seo, Myungsoo | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | Kim, Wu-Kang | ko |
dc.contributor.author | Yun, Dae-Hwan | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2019-03-19T01:05:13Z | - |
dc.date.available | 2019-03-19T01:05:13Z | - |
dc.date.created | 2019-02-18 | - |
dc.date.created | 2019-02-18 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/251502 | - |
dc.description.abstract | An erasing method capable of speeds 10(4)-fold faster compared with those by the conventional Fowler-Nordheim (FN) erasing technique is experimentally demonstrated in a gate-all-around junction less (JL) charge-trap flash memory device using thermal excitation with the aid of electric field. A gate electrode serving as a built-in heater generates Joule heat for thermal excitation of trapped electrons in the charge-trap layer. The electrons excited by thermal excitation are further accelerated for injection into the silicon body by an in-situ applied E-field between the gate and the JL body. Hence, the trapped electrons are removed within 70 ns by electro-thermal erasing. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000457606300010 | - |
dc.identifier.scopusid | 2-s2.0-85058110516 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 196 | - |
dc.citation.endingpage | 199 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2018.2885092 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Kim, Wu-Kang | - |
dc.contributor.nonIdAuthor | Yun, Dae-Hwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Joule heat | - |
dc.subject.keywordAuthor | gate-all-around | - |
dc.subject.keywordAuthor | junctionless | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | charge-trap flash memory | - |
dc.subject.keywordAuthor | non-volatile memory | - |
dc.subject.keywordAuthor | thermal excitation | - |
dc.subject.keywordAuthor | electro-thermal erasing | - |
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