Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory

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An erasing method capable of speeds 10(4)-fold faster compared with those by the conventional Fowler-Nordheim (FN) erasing technique is experimentally demonstrated in a gate-all-around junction less (JL) charge-trap flash memory device using thermal excitation with the aid of electric field. A gate electrode serving as a built-in heater generates Joule heat for thermal excitation of trapped electrons in the charge-trap layer. The electrons excited by thermal excitation are further accelerated for injection into the silicon body by an in-situ applied E-field between the gate and the JL body. Hence, the trapped electrons are removed within 70 ns by electro-thermal erasing.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-02
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199

ISSN
0741-3106
DOI
10.1109/LED.2018.2885092
URI
http://hdl.handle.net/10203/251502
Appears in Collection
EE-Journal Papers(저널논문)
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