DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Jae-Phil | ko |
dc.contributor.author | Kim, Han-Sung | ko |
dc.contributor.author | Ju, Gunwu | ko |
dc.contributor.author | Lim, Hyeong-Rak | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Han, Jae-Hoon | ko |
dc.contributor.author | Kim, Hyung-Jun | ko |
dc.contributor.author | Kim, Sang-Hyeon | ko |
dc.date.accessioned | 2019-02-20T04:57:33Z | - |
dc.date.available | 2019-02-20T04:57:33Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.3, pp.1253 - 1257 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250251 | - |
dc.description.abstract | In this brief, we fabricated Ge (110)-on-insulator (-OI) structures on Si substrates viawafer bonding and epitaxial lift-off (ELO) process using Ge layer grown on GaAs for low-temperature layer stacking toward monolithic 3-D integration. We also systematically investigated the lateral etching behaviors of AlAs, which was used as a sacrificial layer in the ELO process, on GaAs (110) substrates. Fabricated Ge (110)-OI was analyzed by surface atomic force microscopy, X-ray diffraction, Raman shift, and transmission electron microscope analyses. We found that the 40-nm-thick ultrathin-body Ge (110)-OI has very high crystal quality, indicating our Ge stacking process is very stable. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates | - |
dc.type | Article | - |
dc.identifier.wosid | 000425996300065 | - |
dc.identifier.scopusid | 2-s2.0-85041337985 | - |
dc.type.rims | ART | - |
dc.citation.volume | 65 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1253 | - |
dc.citation.endingpage | 1257 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2018.2793285 | - |
dc.contributor.nonIdAuthor | Shim, Jae-Phil | - |
dc.contributor.nonIdAuthor | Kim, Han-Sung | - |
dc.contributor.nonIdAuthor | Ju, Gunwu | - |
dc.contributor.nonIdAuthor | Lim, Hyeong-Rak | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Han, Jae-Hoon | - |
dc.contributor.nonIdAuthor | Kim, Hyung-Jun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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