A Unified Capacitance-Voltage Model of MOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rho, Kwang-Myoung | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.date.accessioned | 2011-08-22T05:52:55Z | - |
| dc.date.available | 2011-08-22T05:52:55Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991 | - |
| dc.identifier.citation | Technical Digest of 2nd International Conference on VLSI and CAD, v., no., pp.167 - 170 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24962 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | KITE | - |
| dc.title | A Unified Capacitance-Voltage Model of MOSFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 167 | - |
| dc.citation.endingpage | 170 | - |
| dc.citation.publicationname | Technical Digest of 2nd International Conference on VLSI and CAD | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Rho, Kwang-Myoung | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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