High-k, ultrathin polymer gate insulator via initiated chemical vapor deposition (iCVD) for thin-film transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Junhwan | ko |
| dc.contributor.author | Joo, Munkyu | ko |
| dc.contributor.author | Pak, Kwanyong | ko |
| dc.contributor.author | Im, Sung Gap | ko |
| dc.date.accessioned | 2018-12-20T05:58:17Z | - |
| dc.date.available | 2018-12-20T05:58:17Z | - |
| dc.date.created | 2018-12-05 | - |
| dc.date.issued | 2018-06-19 | - |
| dc.identifier.citation | 2018 E-MRS Spring Meeting and Exhibit | - |
| dc.identifier.uri | http://hdl.handle.net/10203/248017 | - |
| dc.language | English | - |
| dc.publisher | European Materials Research Society | - |
| dc.title | High-k, ultrathin polymer gate insulator via initiated chemical vapor deposition (iCVD) for thin-film transistor | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2018 E-MRS Spring Meeting and Exhibit | - |
| dc.identifier.conferencecountry | FR | - |
| dc.identifier.conferencelocation | Strasbourg Convention Center | - |
| dc.contributor.localauthor | Im, Sung Gap | - |
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