Oxide Heterostructure Resistive Memory

Cited 157 time in webofscience Cited 0 time in scopus
  • Hit : 351
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorYang, Yuchaoko
dc.contributor.authorChoi, ShinHyunko
dc.contributor.authorLu, Weiko
dc.date.accessioned2018-12-20T05:13:41Z-
dc.date.available2018-12-20T05:13:41Z-
dc.date.created2018-12-03-
dc.date.created2018-12-03-
dc.date.issued2013-06-
dc.identifier.citationNANO LETTERS, v.13, no.6, pp.2908 - 2915-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/247688-
dc.description.abstractResistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleOxide Heterostructure Resistive Memory-
dc.typeArticle-
dc.identifier.wosid000320485100097-
dc.identifier.scopusid2-s2.0-84879123976-
dc.type.rimsART-
dc.citation.volume13-
dc.citation.issue6-
dc.citation.beginningpage2908-
dc.citation.endingpage2915-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl401287w-
dc.contributor.localauthorChoi, ShinHyun-
dc.contributor.nonIdAuthorYang, Yuchao-
dc.contributor.nonIdAuthorLu, Wei-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorResistive random access memory-
dc.subject.keywordAuthormemristive device-
dc.subject.keywordAuthoroxide heterostructure-
dc.subject.keywordAuthorsneak path-
dc.subject.keywordAuthorX-ray photoelectron spectroscopy-
dc.subject.keywordAuthoroxygen vacancy-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusSWITCHING MEMORIES-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusMEMRISTOR-
dc.subject.keywordPlusNANOCROSSBAR-
dc.subject.keywordPlusNANOIONICS-
dc.subject.keywordPlusSYSTEM-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 157 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0