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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN In0.32Ga0.68:P S

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dc.contributor.authorLee, Nam-Youngko
dc.contributor.authorHwang, Insunko
dc.contributor.authorKim, Jae Eunko
dc.contributor.authorPark, Hae Yongko
dc.contributor.authorKwon, Ho Kiko
dc.contributor.authorChoe, B.D.ko
dc.contributor.authorLim, H.ko
dc.date.accessioned2011-07-26T02:52:56Z-
dc.date.available2011-07-26T02:52:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-01-
dc.identifier.citationSOLID STATE COMMUNICATIONS, v.105, no.1, pp.1 - 5-
dc.identifier.issn0038-1098-
dc.identifier.urihttp://hdl.handle.net/10203/24704-
dc.description.abstractThe photoluminescence (PL) characteristics of S-doped In0.32Ga0.68P epilayer grown by liquid phase epitaxy have been studied in the temperature range of 20-300 K. In addition to the two peaks of the near band-edge emission and the donor-to-acceptor transition, a third peak of 2.199 eV at 74 K is observed in a narrow sample temperature range. It is shown that the appearance of this peak is related to the DX centers. The transition is attributed to the recombination of the neutral donor with a hole bound to the DX- center. (C) 1997 Elsevier Science Ltd.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherPergamon-Elsevier Science Ltd-
dc.subjectALXGA1-XAS ALLOYS-
dc.subjectLASERS-
dc.subjectALGAAS-
dc.subjectINGAP-
dc.subjectGAAS-
dc.titlePHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN In0.32Ga0.68:P S-
dc.typeArticle-
dc.identifier.wosidA1998YK73500001-
dc.identifier.scopusid2-s2.0-0031633297-
dc.type.rimsART-
dc.citation.volume105-
dc.citation.issue1-
dc.citation.beginningpage1-
dc.citation.endingpage5-
dc.citation.publicationnameSOLID STATE COMMUNICATIONS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Jae Eun-
dc.contributor.localauthorPark, Hae Yong-
dc.contributor.nonIdAuthorLee, Nam-Young-
dc.contributor.nonIdAuthorHwang, Insun-
dc.contributor.nonIdAuthorKwon, Ho Ki-
dc.contributor.nonIdAuthorChoe, B.D.-
dc.contributor.nonIdAuthorLim, H.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorsemiconductors-
dc.subject.keywordAuthoroptical properties-
dc.subject.keywordAuthorrecombination and trapping-
dc.subject.keywordAuthorluminescence-
dc.subject.keywordPlusALXGA1-XAS ALLOYS-
dc.subject.keywordPlusLASERS-
dc.subject.keywordPlusALGAAS-
dc.subject.keywordPlusINGAP-
dc.subject.keywordPlusGAAS-
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