DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, Shen | ko |
dc.contributor.author | Byeon, Seongjae | ko |
dc.contributor.author | Jang, Sung Kyu | ko |
dc.contributor.author | Lee, Juho | ko |
dc.contributor.author | Lee, Byoung Hun | ko |
dc.contributor.author | Park, Jin-Hong | ko |
dc.contributor.author | Kim, Yong-Hoon | ko |
dc.contributor.author | Lee, Sungjoo | ko |
dc.date.accessioned | 2018-11-22T06:42:38Z | - |
dc.date.available | 2018-11-22T06:42:38Z | - |
dc.date.created | 2018-11-13 | - |
dc.date.created | 2018-11-13 | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | NANOSCALE, v.10, no.39, pp.18758 - 18766 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/10203/246712 | - |
dc.description.abstract | While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density D-it of 6 x 10(11) cm(-2) eV(-1) between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 10(7). Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HEXAGONAL BORON-NITRIDE | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | MOS2 TRANSISTORS | - |
dc.subject | OXIDATION | - |
dc.subject | GRAPHENE | - |
dc.subject | OXIDE | - |
dc.subject | HFO2 | - |
dc.subject | WSE2 | - |
dc.title | HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2 | - |
dc.type | Article | - |
dc.identifier.wosid | 000448421100038 | - |
dc.identifier.scopusid | 2-s2.0-85054927846 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 39 | - |
dc.citation.beginningpage | 18758 | - |
dc.citation.endingpage | 18766 | - |
dc.citation.publicationname | NANOSCALE | - |
dc.identifier.doi | 10.1039/c8nr06020g | - |
dc.contributor.localauthor | Kim, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Lai, Shen | - |
dc.contributor.nonIdAuthor | Byeon, Seongjae | - |
dc.contributor.nonIdAuthor | Jang, Sung Kyu | - |
dc.contributor.nonIdAuthor | Lee, Byoung Hun | - |
dc.contributor.nonIdAuthor | Park, Jin-Hong | - |
dc.contributor.nonIdAuthor | Lee, Sungjoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | WSE2 | - |
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