Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MOS2 Field-Effect Transistor

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dc.contributor.authorHan, Joon-Kyuko
dc.contributor.authorPark, Jun-Youngko
dc.contributor.authorKim, Choong-Kiko
dc.contributor.authorKwon, Jeong Hyunko
dc.contributor.authorKim, Myeong-Sooko
dc.contributor.authorHwang, Byeong Woonko
dc.contributor.authorKim, Da-Jinko
dc.contributor.authorChoi, Kyung Cheolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2018-11-12T04:17:52Z-
dc.date.available2018-11-12T04:17:52Z-
dc.date.created2018-10-22-
dc.date.created2018-10-22-
dc.date.issued2018-10-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.39, no.10, pp.1532 - 1535-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/246307-
dc.description.abstractAn electrothermal annealing (ETA) was applied to improve the ON-state current (I-ON) of an exfoliated MOS(2 )field-effect transistor (FET). The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MOS(2 )channel and MOS2-metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MOS2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MOS2 FETs.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectELECTRONICS-
dc.subjectEXTRACTION-
dc.subjectMOBILITY-
dc.subjectPOWER-
dc.titleElectrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MOS2 Field-Effect Transistor-
dc.typeArticle-
dc.identifier.wosid000446449300012-
dc.identifier.scopusid2-s2.0-85052627609-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.issue10-
dc.citation.beginningpage1532-
dc.citation.endingpage1535-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2018.2867569-
dc.contributor.localauthorChoi, Kyung Cheol-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHan, Joon-Kyu-
dc.contributor.nonIdAuthorPark, Jun-Young-
dc.contributor.nonIdAuthorKim, Myeong-Soo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorContact resistance-
dc.subject.keywordAuthorcontamination-
dc.subject.keywordAuthorexfoliation-
dc.subject.keywordAuthorelectrothermal annealing-
dc.subject.keywordAuthorJoule heat-
dc.subject.keywordAuthorMoS2 FET-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusEXTRACTION-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusPOWER-
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