Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MOS2 Field-Effect Transistor

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An electrothermal annealing (ETA) was applied to improve the ON-state current (I-ON) of an exfoliated MOS(2 )field-effect transistor (FET). The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MOS(2 )channel and MOS2-metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MOS2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MOS2 FETs.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-10
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; ELECTRONICS; EXTRACTION; MOBILITY; POWER

Citation

IEEE ELECTRON DEVICE LETTERS, v.39, no.10, pp.1532 - 1535

ISSN
0741-3106
DOI
10.1109/LED.2018.2867569
URI
http://hdl.handle.net/10203/246307
Appears in Collection
EE-Journal Papers(저널논문)
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