SOI 양자소자 제작과 단전자터널링 특성

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DC FieldValueLanguage
dc.contributor.author이병탁ko
dc.contributor.author박규술ko
dc.contributor.author이철희ko
dc.contributor.author백승원ko
dc.contributor.author이상돈ko
dc.contributor.author박종완ko
dc.contributor.author김장한ko
dc.contributor.author최중범ko
dc.contributor.author민경식ko
dc.contributor.author박진성ko
dc.contributor.author한상연ko
dc.contributor.author박태준ko
dc.contributor.author신형철ko
dc.contributor.author홍성철ko
dc.contributor.author이귀로ko
dc.contributor.author권혁찬ko
dc.contributor.author박세일ko
dc.contributor.author김규태ko
dc.contributor.author유경화ko
dc.date.accessioned2011-07-13T07:44:49Z-
dc.date.available2011-07-13T07:44:49Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-03-
dc.identifier.citation한국물리학회지, v.34, no.6, pp.501 - 502-
dc.identifier.urihttp://hdl.handle.net/10203/24614-
dc.languageKorean-
dc.language.isoen_USen
dc.publisher한국물리학회-
dc.titleSOI 양자소자 제작과 단전자터널링 특성-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume34-
dc.citation.issue6-
dc.citation.beginningpage501-
dc.citation.endingpage502-
dc.citation.publicationname한국물리학회지-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthor홍성철-
dc.contributor.localauthor이귀로-
dc.contributor.nonIdAuthor이병탁-
dc.contributor.nonIdAuthor박규술-
dc.contributor.nonIdAuthor이철희-
dc.contributor.nonIdAuthor백승원-
dc.contributor.nonIdAuthor이상돈-
dc.contributor.nonIdAuthor박종완-
dc.contributor.nonIdAuthor김장한-
dc.contributor.nonIdAuthor최중범-
dc.contributor.nonIdAuthor민경식-
dc.contributor.nonIdAuthor박진성-
dc.contributor.nonIdAuthor한상연-
dc.contributor.nonIdAuthor박태준-
dc.contributor.nonIdAuthor신형철-
dc.contributor.nonIdAuthor권혁찬-
dc.contributor.nonIdAuthor박세일-
dc.contributor.nonIdAuthor김규태-
dc.contributor.nonIdAuthor유경화-
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EE-Journal Papers(저널논문)
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