Three-dimensional nanofabrication using hydrogen silsesquioxane/poly(methylmethacrylate) bilayer resists

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In this work, the authors developed two processes for fabricating three-dimensional (3D) nanostructures using a hydrogen silsesquioxane and poly(methylmethacrylate) bilayer resist stack. The resist stack was patterned in a single electron-beam writing step without removing the wafer. The resulting 3D nanostructures naturally achieved vertical self-alignment without the need for any intermediate alignment. Self-aligned mushroom-shaped posts and freestanding supported structures were demonstrated. (C) 2014 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
Issue Date
2014-11
Language
English
Article Type
Article
Keywords

ELECTRON-BEAM LITHOGRAPHY; SILSESQUIOXANE; NANOSTRUCTURES; FABRICATION

Citation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.6

ISSN
1071-1023
DOI
10.1116/1.4893659
URI
http://hdl.handle.net/10203/245594
Appears in Collection
MS-Journal Papers(저널논문)
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