Contact potential measurement using a heated atomic force microscope tip

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dc.contributor.authorRemmert, Jessica L.ko
dc.contributor.authorWu, Yanko
dc.contributor.authorLee, Jungchulko
dc.contributor.authorShannon, Mark A.ko
dc.contributor.authorKing, William P.ko
dc.date.accessioned2018-09-18T06:02:24Z-
dc.date.available2018-09-18T06:02:24Z-
dc.date.created2018-08-21-
dc.date.created2018-08-21-
dc.date.issued2007-10-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.91, no.14-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/245498-
dc.description.abstractThis letter reports contact potential measurement between the tip of a heated atomic force microscope cantilever and a biased gold film. Force-distance experiments were performed with tip temperature, tip potential, and substrate potential independently controlled. Experiments were conducted for probe temperatures of 23 to 200 degrees C and tip potentials of -1 V to 1 V. The measured contact potential was a function of temperature, due to the thermoelectric properties of the tip and substrate. The Seebeck coefficient for the combined system was close to -4.30 mV/K, consistent with the tip and substrate materials. The technique is scalable to arrays suitable for large area imaging. (c) 2007 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectTHERMOELECTRIC-POWER-
dc.subjectDATA-STORAGE-
dc.subjectSENSORS-
dc.subjectSILICON-
dc.subjectSURFACE-
dc.subjectCANTILEVERS-
dc.subjectJUNCTIONS-
dc.titleContact potential measurement using a heated atomic force microscope tip-
dc.typeArticle-
dc.identifier.wosid000249974100101-
dc.identifier.scopusid2-s2.0-34948890144-
dc.type.rimsART-
dc.citation.volume91-
dc.citation.issue14-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2789927-
dc.contributor.localauthorLee, Jungchul-
dc.contributor.nonIdAuthorRemmert, Jessica L.-
dc.contributor.nonIdAuthorWu, Yan-
dc.contributor.nonIdAuthorShannon, Mark A.-
dc.contributor.nonIdAuthorKing, William P.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHERMOELECTRIC-POWER-
dc.subject.keywordPlusDATA-STORAGE-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusCANTILEVERS-
dc.subject.keywordPlusJUNCTIONS-
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