DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jungchul | ko |
dc.contributor.author | Liao, Albert | ko |
dc.contributor.author | Pop, Eric | ko |
dc.contributor.author | King, William P. | ko |
dc.date.accessioned | 2018-09-18T06:02:03Z | - |
dc.date.available | 2018-09-18T06:02:03Z | - |
dc.date.created | 2018-08-21 | - |
dc.date.created | 2018-08-21 | - |
dc.date.created | 2018-08-21 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | NANO LETTERS, v.9, no.4, pp.1356 - 1361 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/245484 | - |
dc.description.abstract | We utilize a multifunctional atomic force microscope (AFM) cantilever applying highly localized temperature and electric fields to interrogate transport in single-wall carbon nanotube field-effect transistors (CNTFETs). The probe can be operated either in contact with the CNT, in intermittent contact, or as a Kelvin probe, and can independently control the electric field, mechanical force, and temperature applied to the CNT. We modulate current flow in the CNT with tip-applied electric field, and find this field-effect depends upon both cantilever heating and CNT self-heating. CNT transport is also investigated with AFM tip temperature up to 1170 degrees C. Tip-CNT thermal resistance is estimated at 1.6 X 10(7) K/W and decreases with increasing temperature. Threshold force (<100 nN) for reliable contact mode imaging is extracted and used to determine set points for nanotube manipulation, such as displacement or cutting. The ability to measure thermal coupling to a single-molecule electronic device could offer new insights into nanoelectronic devices. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Electrical and Thermal Coupling to a Single-Wall Carbon Nanotube Device Using an Electrothermal Nanoprobe | - |
dc.type | Article | - |
dc.identifier.wosid | 000265030000014 | - |
dc.identifier.scopusid | 2-s2.0-65249104427 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1356 | - |
dc.citation.endingpage | 1361 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/nl803024p | - |
dc.contributor.localauthor | Lee, Jungchul | - |
dc.contributor.nonIdAuthor | Liao, Albert | - |
dc.contributor.nonIdAuthor | Pop, Eric | - |
dc.contributor.nonIdAuthor | King, William P. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MICROSCOPY | - |
dc.subject.keywordPlus | CONDUCTANCE | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | FLOW | - |
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