Electrical and Thermal Coupling to a Single-Wall Carbon Nanotube Device Using an Electrothermal Nanoprobe

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dc.contributor.authorLee, Jungchulko
dc.contributor.authorLiao, Albertko
dc.contributor.authorPop, Ericko
dc.contributor.authorKing, William P.ko
dc.date.accessioned2018-09-18T06:02:03Z-
dc.date.available2018-09-18T06:02:03Z-
dc.date.created2018-08-21-
dc.date.created2018-08-21-
dc.date.created2018-08-21-
dc.date.issued2009-04-
dc.identifier.citationNANO LETTERS, v.9, no.4, pp.1356 - 1361-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/245484-
dc.description.abstractWe utilize a multifunctional atomic force microscope (AFM) cantilever applying highly localized temperature and electric fields to interrogate transport in single-wall carbon nanotube field-effect transistors (CNTFETs). The probe can be operated either in contact with the CNT, in intermittent contact, or as a Kelvin probe, and can independently control the electric field, mechanical force, and temperature applied to the CNT. We modulate current flow in the CNT with tip-applied electric field, and find this field-effect depends upon both cantilever heating and CNT self-heating. CNT transport is also investigated with AFM tip temperature up to 1170 degrees C. Tip-CNT thermal resistance is estimated at 1.6 X 10(7) K/W and decreases with increasing temperature. Threshold force (<100 nN) for reliable contact mode imaging is extracted and used to determine set points for nanotube manipulation, such as displacement or cutting. The ability to measure thermal coupling to a single-molecule electronic device could offer new insights into nanoelectronic devices.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleElectrical and Thermal Coupling to a Single-Wall Carbon Nanotube Device Using an Electrothermal Nanoprobe-
dc.typeArticle-
dc.identifier.wosid000265030000014-
dc.identifier.scopusid2-s2.0-65249104427-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue4-
dc.citation.beginningpage1356-
dc.citation.endingpage1361-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl803024p-
dc.contributor.localauthorLee, Jungchul-
dc.contributor.nonIdAuthorLiao, Albert-
dc.contributor.nonIdAuthorPop, Eric-
dc.contributor.nonIdAuthorKing, William P.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusCONDUCTANCE-
dc.subject.keywordPlusCONTACT-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusFLOW-
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