광펌핑에 의한 GaAs 3-양자우물 VCSEL 상온연속발진

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dc.contributor.author이용희-
dc.contributor.author신재헌-
dc.contributor.author백종협-
dc.contributor.author윤미영-
dc.contributor.author이일항-
dc.date.accessioned2011-07-08T02:47:24Z-
dc.date.available2011-07-08T02:47:24Z-
dc.date.created2012-02-06-
dc.date.issued1994-01-01-
dc.identifier.citation제2회 광자기술 학술회의, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/24512-
dc.languageKOR-
dc.language.isokoen
dc.publisher한국통신학회-
dc.title광펌핑에 의한 GaAs 3-양자우물 VCSEL 상온연속발진-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname제2회 광자기술 학술회의-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor이용희-
dc.contributor.nonIdAuthor신재헌-
dc.contributor.nonIdAuthor백종협-
dc.contributor.nonIdAuthor윤미영-
dc.contributor.nonIdAuthor이일항-

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