DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Yoon Hyung | ko |
dc.contributor.author | Song, Seung Won | ko |
dc.contributor.author | Kim, Jong Min | ko |
dc.contributor.author | Park, Woon Ik | ko |
dc.contributor.author | Kim, Kwang Ho | ko |
dc.contributor.author | Kim, Yong Joo | ko |
dc.contributor.author | Jung, Yeon Sik | ko |
dc.date.accessioned | 2018-08-20T06:48:57Z | - |
dc.date.available | 2018-08-20T06:48:57Z | - |
dc.date.created | 2018-07-25 | - |
dc.date.created | 2018-07-25 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v.28, no.28 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10203/244667 | - |
dc.description.abstract | The precisely controllable self-assembly phenomenon of block copolymers (BCPs) has garnered much attention because it yields well-defined periodic nanostructures with a periodicity of 5-50 nm. However, from both thermodynamic and kinetic viewpoints, it still remains a challenge to develop a BCP material that can provide sub-10 nm resolution, high pattern quality, fast pattern formation, and sufficient etch selectivity. To address these challenges, this study reports a BCP system containing a random-copolymerized block (poly(2-vinylpyridine-co-4-vinylpyridne)-b-poly(dimethylsiloxane) (P(2VP-co-4VP)-b-PDMS)) that can provide sub-6 nm resolution, 3 sigma line edge roughness of 0.89 nm, sub-1-min assembly time, and a high etch selectivity over 10. Calculation of the Flory-Huggins interaction parameter (chi) based on Leibler's mean-field theory and small-angle X-ray scattering measurement data confirms the gradual tunability of chi with the controlled addition of 4VP fraction in the P(2VP-co-4VP) block. While guaranteeing kinetically fast self-assembly within one minute using microwave annealing, the best pattern quality resulting from the thermodynamic suppression of line edge fluctuation is achieved with a 4VP weight fraction of 33% in the random-copolymerized block. This approach enables systematical control of sub-6 nm scale BCP self-assembly and will provide a practical patterning solution for diverse nanostructures and devices. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | SELF-ASSEMBLED PATTERNS | - |
dc.subject | LINE EDGE ROUGHNESS | - |
dc.subject | ANGLE X-RAY | - |
dc.subject | THIN-FILMS | - |
dc.subject | INTERACTION PARAMETER | - |
dc.subject | TRIBLOCK COPOLYMERS | - |
dc.subject | DIBLOCK COPOLYMER | - |
dc.subject | CHEMICAL-PATTERNS | - |
dc.subject | PHASE-BEHAVIOR | - |
dc.subject | LITHOGRAPHY | - |
dc.title | Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High-Quality Sub-6 nm Pattern Formation | - |
dc.type | Article | - |
dc.identifier.wosid | 000437829800014 | - |
dc.identifier.scopusid | 2-s2.0-85047568089 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 28 | - |
dc.citation.publicationname | ADVANCED FUNCTIONAL MATERIALS | - |
dc.identifier.doi | 10.1002/adfm.201800765 | - |
dc.contributor.localauthor | Jung, Yeon Sik | - |
dc.contributor.nonIdAuthor | Park, Woon Ik | - |
dc.contributor.nonIdAuthor | Kim, Kwang Ho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | block copolymers | - |
dc.subject.keywordAuthor | directed self-assembly | - |
dc.subject.keywordAuthor | Flory-Huggins interaction parameters | - |
dc.subject.keywordAuthor | poly(2-vinylpyridine) | - |
dc.subject.keywordAuthor | random copolymers | - |
dc.subject.keywordPlus | SELF-ASSEMBLED PATTERNS | - |
dc.subject.keywordPlus | LINE EDGE ROUGHNESS | - |
dc.subject.keywordPlus | ANGLE X-RAY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | INTERACTION PARAMETER | - |
dc.subject.keywordPlus | TRIBLOCK COPOLYMERS | - |
dc.subject.keywordPlus | DIBLOCK COPOLYMER | - |
dc.subject.keywordPlus | CHEMICAL-PATTERNS | - |
dc.subject.keywordPlus | PHASE-BEHAVIOR | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
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