Grain Scale Representative Volume Element Simulation to Investigate the Effect of Crystal Orientation on Void Growth in Single and Multi-Crystals

Abstract

Crystal plasticity finite element (CPFE) simulations were performed on the representative volume elements (RVE) modeling body centered cubic (bcc) single, bi-and tri-crystals. The RVE model was designed to include a void inside a grain, at a grain boundary and at a triple junction. The effect of single crystal orientation on the flow strength and growth rate of the void was discussed under prescribed boundary conditions for constant stress triaxialities. CPFE analyses could explain the effect of inter-grain orientations on the anisotropic growth of the void located at the grain boundaries. The results showed that the rate of void growth had preferred orientation in a single crystal, but the rate could be significantly different when other orientations of neighboring crystals were considered.