(The) study of band structure and transport of silicon nanowire with various cross sections using finite element method

Abstract

As the size of the device becomes smaller by several nanometers, the limitations of conventional planar metal-oxide-semiconductor field-effect-transistors (MOSFETs) such as short channel effect and leakage current increase have been revealed. As an alternative to overcome this problem, nanowire FETs with excellent gate controllability are attracting attention as candidates for future devices. However, nanowire FETs have the problem of deforming the shape of the cross section during etching or oxidation process. In this thesis, the band structure of silicon nanowire was evaluated by using finite element method (FEM) to analyze nanowire FETs with these cross sections. In addition, the solver of Poisson's equation, which is indispensable in a full-quantum simulator using FEM, was developed and the stability of the calculation method was tested in various ways. Based on the research results, this study will be the cornerstone of the development of a new full-quantum simulator with FEM.