(The) effect of buffer layer on tunnel magnetoresistance and electric field effect in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction버퍼층에 따른 CoFeB/MgO/CoFeB 수직 자기터널접합에서의 터널 자기저항 및 전계 효과에 관한 연구

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Conventional memory device which has volatile property causes large electric power loss due to the increase of standby-current as the device scales down. Among next generation memories, MRAM based on magnetic materials has received a great attention due to non-volatile, field-free magnetization switching in spin-transfer torque (STT) operation, and lower magnetization switching current as the device density increases. However, the thermal stability of STT-MRAM is reduced as the device size decreases. To solve this problem, new buffer materials which have high anneal condition for perpendicular magnetic anisotropy (PMA) compared to conventional Ta were studied at first. Meanwhile, modification of magnetic anisotropy was recently observed when electric field is induced in ferromagnet/oxide structures. Thus, the electric field effect could maintain thermal stability of device and reduce the energy barrier of magnetization switching during switching operation only. In this thesis, we study the electromagnetic property of perpendicular magnetic tunnel junctions and the change of magnetic properties by the electric field effect through the introduction of new buffer materials having the perpendicular magnetic anisotropy at higher anneal temperature than that of the conventional Ta buffer layer.
Advisors
Park, Byong-Gukresearcher박병국researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2017
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2017.2,[viii, 56 p. :]

Keywords

magnetic tunnel junction; PMA; thermal stability; electric field effect; buffer layer; 자기터널접합; 수직자기이방성; 열적 안정성; 전계 효과; 버퍼층

URI
http://hdl.handle.net/10203/243127
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=675254&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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