DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Jung, You Sung | - |
dc.contributor.advisor | 정유성 | - |
dc.contributor.author | Park, Woong Hyeon | - |
dc.date.accessioned | 2018-06-20T06:12:15Z | - |
dc.date.available | 2018-06-20T06:12:15Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=718506&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/242653 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : EEWS대학원, 2017.8,[iii, 18 p. :] | - |
dc.description.abstract | In this study, we studied oxygen reduction reaction (ORR) on 2D carbon based materials theoretically. Three different carbon materials were modelled, nitrogen doped graphene (NGr), nitrogen doped graphene supported on SiC (NGr/SiC) and SiC buffer layer. We calculate reaction free energies of ORR on these systems by using DFT calculations and compare each onset potentials. The NGr/SiC showed a higher onset potential with more stabilization of * OOH and * O compared to the NGr. The reaction on the silicon carbide buffer layer exhibited the highest onset potential of 0.75 V. The carbons in the buffer layer chemically bonded to silicon are expected to chemically react without doping, unlike conventional graphene. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | silicon carbide▼aoxygen reduction▼aDFT calculation▼aelectrochemistry▼abuffer layer▼acatalyst | - |
dc.subject | 탄화규소 지지체▼a산소환원반응▼aDFT 계산▼a전기화학▼a버퍼층 | - |
dc.title | Electroreduction of oxygen on the surface of carbon based 2D materials supported on silicon carbide | - |
dc.title.alternative | 탄소 기반의 이차원 물질의 탄화 규소 지지체 효과에 따른 산소환원반응에 대한 이론적 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :EEWS대학원, | - |
dc.contributor.alternativeauthor | 박웅현 | - |
dc.title.subtitle | (a) DFT study | - |
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