Detection of the Interface-Trap Charge Density and Lateral Nonuniformity of Through-Silicon Vias

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dc.contributor.authorKim, Kibeomko
dc.contributor.authorAhn, Jangyongko
dc.contributor.authorAhn, Seungyoungko
dc.date.accessioned2018-06-16T06:35:47Z-
dc.date.available2018-06-16T06:35:47Z-
dc.date.created2018-05-28-
dc.date.created2018-05-28-
dc.date.issued2018-05-
dc.identifier.citationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.5, pp.422 - 424-
dc.identifier.issn1531-1309-
dc.identifier.urihttp://hdl.handle.net/10203/242413-
dc.description.abstractThrough-silicon via (TSV) technology has emerged as a key component of 3-D integrated circuits. As the integration density in a package increases, the nonlinear metal-oxide-semiconductor (MOS) capacitance in TSVs has a greater effect on the electrical performance of the devices. Imperfections due to the deposition of a dielectric layer are important factors which can change the characteristics of the MOS capacitance. This letter presents a method by which to detect the interface-trap charge density D-it and lateral nonuniformity (LNU) of imperfections in TSVs. The results of an analysis of a measured sample define Dit and LNU at the dielectric-semiconductor interface and demonstrate that the presence of LNU can be established by a negative D-it.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectPERFORMANCE ANALYSIS-
dc.subjectMOS CAPACITORS-
dc.titleDetection of the Interface-Trap Charge Density and Lateral Nonuniformity of Through-Silicon Vias-
dc.typeArticle-
dc.identifier.wosid000432008700020-
dc.identifier.scopusid2-s2.0-85045758508-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue5-
dc.citation.beginningpage422-
dc.citation.endingpage424-
dc.citation.publicationnameIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.identifier.doi10.1109/LMWC.2018.2822731-
dc.contributor.localauthorAhn, Seungyoung-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorInterface-trap charge density-
dc.subject.keywordAuthorlateral nonuniformity (LNU)-
dc.subject.keywordAuthormetal-oxide-semiconductor (MOS)-
dc.subject.keywordAuthorthrough-silicon via (TSV)-
dc.subject.keywordPlusPERFORMANCE ANALYSIS-
dc.subject.keywordPlusMOS CAPACITORS-
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