Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Hae Yong | ko |
| dc.date.accessioned | 2011-06-27T09:00:57Z | - |
| dc.date.available | 2011-06-27T09:00:57Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-01 | - |
| dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE LETTERS, v.13, pp.898 - 900 | - |
| dc.identifier.issn | 0261-8028 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24207 | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | Chapman & Hall | - |
| dc.title | Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 13 | - |
| dc.citation.beginningpage | 898 | - |
| dc.citation.endingpage | 900 | - |
| dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE LETTERS | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Park, Hae Yong | - |
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