Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

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Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10(5)) with better endurance (similar to 2000 cycles) and longer data retention (10(4) s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.
Publisher
IOP PUBLISHING LTD
Issue Date
2018-06
Language
English
Article Type
Article
Keywords

CONDUCTIVE FILAMENT; MEMORY APPLICATIONS; LAYER DEPOSITION; THIN-FILMS; DEVICES; GROWTH; MECHANISM; ELECTRODE

Citation

NANOTECHNOLOGY, v.29, no.23

ISSN
0957-4484
DOI
10.1088/1361-6528/aab6a3
URI
http://hdl.handle.net/10203/241559
Appears in Collection
EE-Journal Papers(저널논문)
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