Vertical tunneling filed effect transistor based on p++ silicon and MoS2 heterostructure

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 212
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorPark, Haminko
dc.contributor.authorKoo, BonDaeko
dc.contributor.authorWoo, youngjunko
dc.contributor.authorLEE, JAEEUNko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2018-05-23T06:14:51Z-
dc.date.available2018-05-23T06:14:51Z-
dc.date.created2018-04-23-
dc.date.created2018-04-23-
dc.date.created2018-04-23-
dc.date.issued2018-03-29-
dc.identifier.citation제 5회 한국 그래핀 심포지엄-
dc.identifier.urihttp://hdl.handle.net/10203/241490-
dc.languageEnglish-
dc.publisher제 5회 한국 그래핀 심포지엄-
dc.titleVertical tunneling filed effect transistor based on p++ silicon and MoS2 heterostructure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname제 5회 한국 그래핀 심포지엄-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation부여 롯데리조트-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorKoo, BonDae-
dc.contributor.nonIdAuthorWoo, youngjun-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0