DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Taeho | ko |
dc.contributor.author | Hur, Ji-Hyun | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:53:03Z | - |
dc.date.available | 2018-03-21T02:53:03Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.27, no.21 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240762 | - |
dc.description.abstract | Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ELECTRON-TRAPPING CHARACTERIZATION | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | G METHODOLOGY | - |
dc.subject | PERFORMANCE | - |
dc.subject | INSTABILITY | - |
dc.subject | INTERFACE | - |
dc.subject | STRESS | - |
dc.title | Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states | - |
dc.type | Article | - |
dc.identifier.wosid | 000374507600005 | - |
dc.identifier.scopusid | 2-s2.0-84964720176 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 21 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/27/21/215203 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Kim, Taeho | - |
dc.contributor.nonIdAuthor | Hur, Ji-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | carrier transport | - |
dc.subject.keywordAuthor | sub-gap states | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRON-TRAPPING CHARACTERIZATION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | G METHODOLOGY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | STRESS | - |
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